Electrically Active Defects in SiC Power MOSFETs

Electrically active point defects in n-type 4H–SiC

An electrically active defect has been observed at a level position of ;0.70 eV below the conduction band edge (Ec) with an extrapolated capture cross section of ;5310 214 cm in epitaxial layers of 4H–SiC grown by vapor phase epitaxy with a concentration of approximately 1310 cm. Secondary ion mass spectrometry revealed no evidence of the transition metals Ti, V, and Cr. Furthermore, after elec...

Thermal instability effects in SiC Power MOSFETs

Silicon carbide (SiC) power MOSFETs are characterised by potentially thermally unstable behaviour over a broad range of bias conditions. In the past, such behaviour has been shown for silicon (Si) MOSFETs to be related to a reduction of Safe Operating Area at higher drain–source bias voltages. For SiC MOSFETs no characterisation exists yet. This paper presents a thorough experimental investigat...

Technology for Controlling Trench Shape in SiC Power MOSFETs

As the worldwide consumption of energy is increases and the global environment steadily deteriorates, society must find more efficient ways to utilize energy in order to achieve sustainable advances. Accordingly, the field of power electronics is of vital importance, and huge advances in power semiconductor devices are anticipated. Power semiconductor devices that use silicon (Si) are said to b...

High temperature pulsed-gate robustness testing of SiC power MOSFETs

Theoretical Investigation of Electrically Active Defects in Silicon

First principles methods can provide the structure and electrical properties of defects in silicon. The theory behind these calculations is presented and illustrated for a number of defect systems. In particular, the energy levels of transition metal hydrogen defects are described along with those of radiation induced complexes.